MOS辐射损伤的栅氧化层厚度效应

朱辉; 严荣良; 王宇; 何金明

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MOS辐射损伤的栅氧化层厚度效应

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- MOS辐射损伤的栅氧化层厚度效应
- The effects of gate oxide thickness on radiation damage in MOS system
- 核技术 1988年11卷第4期
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1986-12-26，
  
  纸质出版日期：1988-04
- 稿件说明：
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朱辉, 严荣良, 王宇, 等. MOS辐射损伤的栅氧化层厚度效应[J]. 核技术, 1988,11(4):17-23.

Hui Zhu, Rongliang Yan, Yu Wang, et al. The effects of gate oxide thickness on radiation damage in MOS system[J]. Nuclear techniques, 1988, 11(4): 17-23.
朱辉, 严荣良, 王宇, 等. MOS辐射损伤的栅氧化层厚度效应[J]. 核技术, 1988,11(4):17-23. DOI：

Hui Zhu, Rongliang Yan, Yu Wang, et al. The effects of gate oxide thickness on radiation damage in MOS system[J]. Nuclear techniques, 1988, 11(4): 17-23. DOI：

摘要

本文研究了电子、γ射线辐照MOS器件、电容引起的平带电压漂移

∆V

和阈电压漂移

∆V

与氧化层厚度

和总剂量D的关系。实验得到：在+10V偏置辐照下，

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http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175719&type=

；在导通偏置辐照下，

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175721&type=

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175723&type=

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175722&type=

；在零偏置辐照下，

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175724&type=

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175726&type=

http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175725&type=

。运用Viswanathan模型解释了实验结果。并根据

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http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175737&type=

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关系简单讨论了MOS器件抗辐射加固工艺的优化问题。

Abstract

The dependences of the flatband voltage shift (

∆V

) and the threshold voltage shift (

∆V

) in MOS system on the oxide thickness (

) and on total irradiated dose (

) of electron-beam and

-ray have been studied. It has been found that

∆V

∝

with+10V of gate bias during irradiation for n-Si substrate MOS capacitors

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with "on" gate bias during irradiation for n- and P-channel MOS transistors;

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http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=34175746&type=

with "off" gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to

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dependence

the optimization of radiation hardening process for MOS system is also simply discussed.

关键词

Keywords

references

G. W. Hughes and R. J. Powell , IEEE Trans. Nucl. Sci. , NS-23 , ( 1976 ), 1569 .

G. F. Derbenwick and B. L. Gregory , ibid. , NS-22 ( 1975 ), 2151 .

G. W. Hughes , Appl. Phys. Lett. , 29 ( 1976 ), 377 .

K. Naruke et al . , IEEE Trans. Nucl. Sci. , NS-30 ( 1983 ), 4054 .

杜瑞瑞等，半导体学报， 4 （ 1983 ）， 1 ：。

C. R. Viswanathan and J. Maserjian ， IEEE. Trans. Nucl. Sci. ， NS-23 （ 1976 ）， 1540 。

J. G. Forssum , et al . , IEEE Trans. Nucl. Sci. , NS-22 , ( 1975 ), 2208 .

P. S. Winokur et al . , ibid , NS-24 ( 1977 ), 2113 .

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