Jiarui Liu, Junsi Zhou, Yupu Li, et al. A target chamber for ion implantation at variable temperatures[J]. Nuclear techniques, 1988, 11(2): 41-42,44,63.
Jiarui Liu, Junsi Zhou, Yupu Li, et al. A target chamber for ion implantation at variable temperatures[J]. Nuclear techniques, 1988, 11(2): 41-42,44,63.DOI:
A target chamber for ion implantation and in-situ electrical measurement at temperatures variable between 77-800K is presented. It has over the years been used at beam power of about 10 W for ion beam mixing of metals
sillicides and some superconducting materials. Temperature drifts measured are±3 K at the values selected.