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1.中国原子能科学研究院
2.中国科学院半导体研充所
3.中国科学院高能物理研究所
收稿日期:1984-02-20,
纸质出版日期:1987-06
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王豫生, 阎建华, 郑胜男, 等. 沟道效应及某些应用的研究[J]. 核技术, 1987,10(6):23-28,61.
Yusheng Wang, Jianhua Yan, Shengnan Zheng, et al. Channelling effect and its application[J]. Nuclear techniques, 1987, 10(6): 23-28,61.
本文介绍沟道-背散射分析的实验装置。用沟道-背散射方法进行了辐射损伤测定、表面组分分析、异质外延层的缺陷分析,得到了一些对半导体材料工艺、集成电路研制的有意义的结果。
An experimental installation of channeling backscattering is described. Using channel backscattering method
study on the measurement of radiation defect
analysis of surface components
and analysis of the defect of foreign bosy extensional layer are carried out
and have achieved some results meaning full to semiconductor material technology and integrated circuit.
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