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中国科学院上海冶金研究所
收稿日期:1985-12-02,
纸质出版日期:1987-05
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陈国樑. 元素溅射率与离子束入射角的关系[J]. 核技术, 1987,10(5):1-4,59.
Guoliang Chen. Relation of relative sputtering yields with incidence angles of ions[J]. Nuclear techniques, 1987, 10(5): 1-4,59.
Yamamura
[1]
指出:若能量为
E
的离子束倾斜轰击多晶元素靶,则原子相对溅射率
y
(θ)=
Y
(
θ
)/
Y
(0°)随离子束入射角
θ
变化的曲线可表示为含二个参数的经验公式:
y(θ)=t
f
•exp{g-(
t
-1)}
t
=sec
θ
。其中,
f
和
g
是待定参数,其值由实验决定。
g
=
f
•cos
θ
0
θ
0
是元素溅射率
Y
(
θ
0
)达到最大值时的离子束最佳入射角。
我们导出了离子束的最佳入射角拟合公式(8),并讨论了它的物理意义。因而,含二个参数的Yamamura经验公式(1)变成只含一个参数的原子相对溅射率公式(4)。其中,待定参数
f
的值由解析公式(21)给出。
Yamamura obtained an empirical formula of relative sputtering yields for monoatomic targets bombarded by low energy ions at oblique incidence as follows: y (θ) =Y (θ) /Y (0°) =t
f
• exp{- g (t- 1) }
t=secθ where f and g are fitting parameters depending on the measured curve of sputtering yields.
We pointed out that g=f • cosθ
0
where θ
0
is the optimum incidence angle of ions at which sputtering yield Y (θ
0
) reaches the maximum. An analytical expression for θ
0
was derived and its physical meaning was discussed in the paper.
Finally
Yamamura formula could be written with the unique parameter f. The calculated results showed the equation given was accurate within a relative error of ±12%for targets Si and Ni bombarded by ions Ar and H in the low-energy range.
Y. Yamamura , IPPJ-AM -26 ( 1982 ).
T. Hoffmann , Nucl. Sci. Eng. , 68 , 204 ( 1978 ).
J. Biersack , Program ( 1982 ) unpublished .
J. Roth et al. , IPP 9/26 ( 1979 ).
W. Eckstein , Nucl. Instr. Meth. Phys. Res. , B2 , 550 ( 1984 ).
J. Lindhard et al. , K. Dan. Vid. Selsk. Mat. Fys. Medd. , 33 , 14 , ( 1963 ).
P. Sigmund , Phys. Rev. , 184 , 383 ( 1969 ).
陈国樑 , 半导体学报 , 6 , 627 ( 1985 )。
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