The effects of ion sputtering was studied in ion implantation. These are: surface sputtering

profile correction of doping concentration and total amount of doping. Relations among these effects and energy

dose

ions and target atoms were analysed. The calculations showed that the amount of Sn implanted into Fe was saturated when Sn was implanted at 100keV in the dose of greater than 3×10

16

/cm

2

. The saturated amount of Sn in Fe is dependent on energy of Sn. For example

the saturated amount of dose is only 1.35×10

16

/cm

2

when Sn is implanted at 5keV. But the amount of Sn reaches 5.6×10

16

/cm

2

when Sn is implanted at 300keV. The amount is raised about four times.