As通过SiO<sub>2</sub>在硅中反冲氧的计算及其对剩余缺陷的影响

张通和; 何树声; 卢殿通; 曾庆城

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As通过SiO₂在硅中反冲氧的计算及其对剩余缺陷的影响

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- As通过SiO₂在硅中反冲氧的计算及其对剩余缺陷的影响
- The calculation of recoil oxygen by As implanted through SiO₂ and the effects of residual defects
- 核技术 1987年10卷第1期
- 作者机构：
  
  1.北京师范大学低能核物理研究所
  2.江西大学
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 纸质出版日期：1987-01
- 稿件说明：
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张通和, 何树声, 卢殿通, 等. As通过SiO₂在硅中反冲氧的计算及其对剩余缺陷的影响[J]. 核技术, 1987,10(1):43-47,63,64.

Tonghe Zhang, Shusheng He, Diantong Lu, et al. The calculation of recoil oxygen by As implanted through SiO₂ and the effects of residual defects[J]. Nuclear techniques, 1987, 10(1): 43-47,63,64.
张通和, 何树声, 卢殿通, 等. As通过SiO₂在硅中反冲氧的计算及其对剩余缺陷的影响[J]. 核技术, 1987,10(1):43-47,63,64. DOI：

Tonghe Zhang, Shusheng He, Diantong Lu, et al. The calculation of recoil oxygen by As implanted through SiO₂ and the effects of residual defects[J]. Nuclear techniques, 1987, 10(1): 43-47,63,64. DOI：

摘要

通过SiO

而将As、P和B注入到硅中去的方法通常是制备MOS电路和双极电路的重要掺杂手段。这种方法的优点在于可防止离子对硅单晶表面的溅射、污染和减少辐射损伤。

Abstract

The recoil oxygen profiles which were caused by As ions implanted through the film of SiO

were calculated. The energies of the ions are 50 keV

100 keV and 140 keV. The thicknesses of SiO

are 200 Å

450 Å and 650 Å respectively. The recoil oxygen profiles of B

implanted through 200 Å thickness of SiO

were calculated too. The results observed were compared with the calculations

and they matched well.

The calculation proved that total oxygen in Si was maximum when the d=R

was used in As ion implantation. But when the condition d≥3R

was used. the total oxygen in Si of ion implantation was very little and negligible.

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references

G. Fisher et al. , Radiation Effects , 38 , 41 ( 1978 ).

L. A. Christel and J. F. Gibbons . Nucl. Instr. Meth. , 182/183 , 187 ( 1981 ).

G. Gres Marti and Sigmund , ibid , 180 , 1 , 211 ( 1981 ).

Yasuo Wada and Norikazn Hashimoto , J. Electrochem. Soc. Solide State Science and Technology , 127 , 2 , 461 ( 1980 ).

R. A. Moline and A. G. Cullis , Applied Physics Letters , 26 , 10 , 551 ( 1975 ).

P. Sigmund , Physical Review , 184 , 2 , 283 ( 1969 ).

北京师大低能核物理研究所编，注入离子原理和技术，北京出版社， 1982 年，第 332 页。

曾庆城，物理学报 , 30 , 2 , 249 ( 1981 )。

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As通过SiO2在硅中反冲氧的计算及其对剩余缺陷的影响

The calculation of recoil oxygen by As implanted through SiO2 and the effects of residual defects

DOI：

摘要

Abstract

关键词

Keywords

references

As通过SiO₂在硅中反冲氧的计算及其对剩余缺陷的影响

The calculation of recoil oxygen by As implanted through SiO₂ and the effects of residual defects