The measurement of collecting character in current mode semiconductor detectors

Guo Zhendi; Sun Chuanshen; Chen Wenxiong; Zheng Xiucong; Zhuang Guochen; Huang Yuanshan; Xu Peihua

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The measurement of collecting character in current mode semiconductor detectors

更新时间：2022-08-16

- The measurement of collecting character in current mode semiconductor detectors
- 电流型半导体探测器收集特性的测定
- Nuclear Techniques 1981年04卷第5期
- 作者机构：
  
  1.Fudan University
  2.21 Institute
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1979-09-19，
  
  纸质出版日期：1981-10
- 稿件说明：
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Guo Zhendi, Sun Chuanshen, Chen Wenxiong, 等. The measurement of collecting character in current mode semiconductor detectors[J]. Nuclear Techniques, 1981,04(5):21-25,40,40.

箴第郭, 传琛孙, 文熊陈, et al. 电流型半导体探测器收集特性的测定[J]. 核技术, 1981, 04(5): 21-25,40,40.
Guo Zhendi, Sun Chuanshen, Chen Wenxiong, 等. The measurement of collecting character in current mode semiconductor detectors[J]. Nuclear Techniques, 1981,04(5):21-25,40,40. DOI：

箴第郭, 传琛孙, 文熊陈, et al. 电流型半导体探测器收集特性的测定[J]. 核技术, 1981, 04(5): 21-25,40,40. DOI：

摘要

Abstract

利用2.5MeV质子静电加速器调制成微秒宽度的单次脉冲束流，照射国产离子注入PIN及Au-Si面垒型探测器表面后，观察从示波器屏幕上同时拍摄的探测器输出波形和束流波形并加以比较，由此观察耗尽区内部电荷积累对平顶畸变、收集时间大小的影响及收集效率等参数。

A microsecond width single pulse beam has been modulated from a 2.5 MeV Vam de Graaff accelerator. With the beam falling on the surface of a PIN or Au-Si surface barrier semiconductor detector

the wave shapes of the detector output current and the beam current were photographed simultaneously and compared with each other to find the influence of charge deposition in depletion region on the time plateau of the current wave shape and the collecting time

thus to obtain the collecting efficiency and other parameters. Under different beam magnitudes and biases

changes in output current wave shapes of some home-made PIN and Au-Si detectors were measured.

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