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Total ionization dose and transient dose rate effects of a Toggle magnetoresistive random access memory
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2026-03-25

    • Total ionization dose and transient dose rate effects of a Toggle magnetoresistive random access memory

    • NUCLEAR TECHNIQUES   Vol. 49, Issue 3, Article number: 030503(2026)

    • DOI：10.3724/j.0253-3219.2026.hjs.49.250185    

      CLC： TN386.1

    • Received：26 April 2025，

      Revised：2025-09-16，

      Published：15 March 2026

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  • XIONG Cen,DU Chuanhua,CHEN Quanyou,et al.Total ionization dose and transient dose rate effects of a Toggle magnetoresistive random access memory[J].NUCLEAR TECHNIQUES,2026,49(03):030503. DOI： 10.3724/j.0253-3219.2026.hjs.49.250185. CSTR： 32193.14.hjs.CN31-1342/TL.2026.49.250185.

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