The 500 keV electron irradiation effect on free-standing reduced graphene oxide film
“According to the latest research report, the resistance of reduced graphene oxide films increases under high-energy electron irradiation, causing changes in structure and chemical composition, slightly improving thermal stability, and increasing graphene interlayer spacing.”
ZHEN Xiaojuan, female, born in 1987, graduated from Lanzhou Institute of Physics, China Academy of Space Technology with a doctoral degree in 2020, associate professor, focusing on space environmental effects of new nanomaterials
HUANG Yifan, E-mail: yifanhuang@hit.edu.cn
基金信息:
the Higher Education Doctor Research Fund of Gansu Province(2024QB-097);the Higher Education Innovation Research Fund of Gansu Province(2023B-153;2024A-137);the Science and Technology Plan Project of Lanzhou City(2024-3-95)
Gamma ray irradiation response of the trench MOSFET amplifier
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TANG Jun
NONG Shuying
LUO Yuwen
ZHANG Wei
YANG Tinggui
Related Institution
The Company Limited, China National Nuclear Corperation
Gansu Key Laboratory of Nuclear Fuel Cycle Technology
China National Nuclear Wuhan Nuclear Power Operation Technology Co., Ltd.
State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences