您当前的位置：
首页 >
文章列表页 >
Research progress on irradiation effect of InP-based high electron mobility transistors
INVITED REVIEW | 更新时间：2025-02-13
|

    • Research progress on irradiation effect of InP-based high electron mobility transistors

    • “In the field of space communication, progress has been made in the study of the effects of high-energy particle radiation on the performance of indium phosphide based high electron mobility transistors and radiation hardening techniques, providing reference for improving the reliability of space communication systems.”
    • NUCLEAR TECHNIQUES   Vol. 48, Issue 1, Article number: 010003(2025)

    • DOI：10.11889/j.0253-3219.2025.hjs.48.230127    

      CLC： TL99

    • Received：13 October 2023，

      Published：15 January 2025

    移动端阅览

  • FANG Renfeng,ZHOU Shuxing,CAO Wenyu,et al.Research progress on irradiation effect of InP-based high electron mobility transistors[J].NUCLEAR TECHNIQUES,2025,48(01):010003-010003. DOI： 10.11889/j.0253-3219.2025.hjs.48.230127. CSTR： 32193.14.hjs.CN31-1342/TL.2025.48.230127.

  •  
  •  

0

Views

37

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

No data

Related Author

No data

Related Institution

No data
0