Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method
“In the field of nuclear energy, new progress has been made in the ultrasonic cutting processing of 3C SiC nanowires, providing a new perspective for nuclear energy applications.”
PENG Shancheng, male, born in 1999, graduated from University of Chinese Academy of Sciences with a master's degree in 2024, focusing on carbon-based materials
HE Zhoutong, E-mail: hezhoutong@sinap.ac.cn
基金信息:
National Nature Science Foundation of China(U20B2010)
PENG Shancheng,LI Yiyan,MA Huilei,et al.Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method[J].NUCLEAR TECHNIQUES,2024,47(07):070502--070502-.
PENG Shancheng,LI Yiyan,MA Huilei,et al.Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method[J].NUCLEAR TECHNIQUES,2024,47(07):070502--070502-. DOI: 10.11889/j.0253-3219.2024.hjs.47.070502.
Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method