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Proton irradiation damage in silicon carbide junction barrier Schottky diode
ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2024-10-25
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    • Proton irradiation damage in silicon carbide junction barrier Schottky diode

    • “In the field of radiation resistance applications, domestically produced silicon carbide barrier Schottky diodes exhibit excellent resistance to proton irradiation damage at intermediate energy levels. Through 10 MeV proton irradiation experiments, the degradation mechanism of device radiation effects was clarified, providing data support for the evaluation of intermediate energy proton environment applications.”
    • NUCLEAR TECHNIQUES   Vol. 46, Issue 2, Article number: 020203(2023)

    • DOI：10.11889/j.0253-3219.2023.hjs.46.020203    

      CLC： TL99

    • Received：25 June 2022，

      Revised：18 October 2022，

      Published：15 February 2023

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  • LIU Cuicui,LI Zhiming,HAN Jinhua,et al.Proton irradiation damage in silicon carbide junction barrier Schottky diode[J].NUCLEAR TECHNIQUES,2023,46(02):020203. DOI： 10.11889/j.0253-3219.2023.hjs.46.020203.

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