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Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
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    • Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias

    • “In the semiconductor field, researchers have investigated the effect of back gate bias on the electrical parameters of PD SOI MOSFETs and found that back gate bias can significantly enhance the damage of long channel transistors.”
    • NUCLEAR TECHNIQUES   Vol. 45, Issue 5, Article number: 050502(2022)

    • DOI：10.11889/j.0253-3219.2022.hjs.45.050502    

      CLC： TL99

    • Received：18 February 2022，

      Revised：10 March 2022，

      Published：15 May 2022

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  • WANG Haiyang,ZHENG Qiwen,CUI Jiangwei,et al.Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias[J].NUCLEAR TECHNIQUES,2022,45(05):49-54. DOI： 10.11889/j.0253-3219.2022.hjs.45.050502.

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