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Recent research progress of single particle effect of SiC MOSFET
INVITED REVIEW | 更新时间：2024-10-25
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    • Recent research progress of single particle effect of SiC MOSFET

    • “The single particle effect problem of SiC MOSFET devices is becoming increasingly prominent in the fields of nuclear energy and space technology. The expert system summarizes the research progress at home and abroad, providing reference for a deeper understanding of the issue.”
    • NUCLEAR TECHNIQUES   Vol. 45, Issue 1, Article number: 010001(2022)

    • DOI：10.11889/j.0253-3219.2022.hjs.45.010001    

      CLC： TL99

    • Received：13 October 2021，

      Revised：23 November 2021，

      Published：15 January 2022

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  • LIU Cuicui,GUO Gang,LI Zhiming,et al.Recent research progress of single particle effect of SiC MOSFET[J].NUCLEAR TECHNIQUES,2022,45(01):1-14. DOI： 10.11889/j.0253-3219.2022.hjs.45.010001.

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