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Radiation effect sensitive peripheral of 180 nm CMOS microprocessor and probabilistic model analysis of its damage dose
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
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    • Radiation effect sensitive peripheral of 180 nm CMOS microprocessor and probabilistic model analysis of its damage dose

    • “In the field of 180 nanometer complementary metal oxide semiconductor microprocessors, experts analyzed the sensitivity of on-chip and off chip devices to ionizing radiation and established a failure probability model for on-chip flash memory, providing reference for radiation resistant design.”
    • NUCLEAR TECHNIQUES   Vol. 44, Issue 3, (2021)

    • DOI：10.11889/j.0253-3219.2021.hjs.44.030502    

      CLC： TL99

    • Received：21 September 2020，

      Revised：15 December 2020，

      Published：15 March 2021

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  • LIU Yining,YANG Yapeng,CHEN Faguo,et al.Radiation effect sensitive peripheral of 180 nm CMOS microprocessor and probabilistic model analysis of its damage dose[J].NUCLEAR TECHNIQUES,2021,44(03):030502. DOI： 10.11889/j.0253-3219.2021.hjs.44.030502.

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