Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5
SYNCHROTRON RADIATION TECHNOLOGY AND APPLICATIONS|更新时间:2024-10-25
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Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5
“In the fields of optical recording and data storage, progress has been made in the study of structural changes of Ge2Sb2Te5 material under X-ray irradiation, providing reference for the research of radiation resistance mechanism and radiation reinforcement technology.”
NUCLEAR TECHNIQUESVol. 44, Issue 3, (2021)
作者机构:
1.中国科学院微电子研究所 微电子器件与集成技术重点实验室 北京 100029
2.中国科学院大学 北京 100049
3.中国科学院高能物理研究所 北京 100049
作者简介:
HE Peiyao, female, born in 1995, graduated from Henan University in 2018, master student, focusing on micro-nano optical technology
ZHU Xiaoli, E-mail: zhuxiaoli@ime.ac.cn
基金信息:
National Natural Science Foundation of China(U1832217;61774166)
HE Peiyao,ZHAO Yue,LIU Yu,et al.Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5[J].NUCLEAR TECHNIQUES,2021,44(03):030102. DOI: 10.11889/j.0253-3219.2021.hjs.44.030102.
Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5