您当前的位置：
首页 >
文章列表页 >
Experimental study on the total ionizing dose effects of nonvolatile RRAM
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
|

    • Experimental study on the total ionizing dose effects of nonvolatile RRAM

    • “In the aerospace field, research on the radiation resistance of new non-volatile memory RRAM has made progress. Experts analyzed the total dose effect failure mechanism of RRAM and provided solutions to improve the reliability of spacecraft electronic systems.”
    • NUCLEAR TECHNIQUES   Vol. 43, Issue 12, (2020)

    • DOI：10.11889/j.0253-3219.2020.hjs.43.120502    

      CLC： TL99

    • Received：11 September 2020，

      Revised：12 November 2020，

      Published：15 December 2020

    移动端阅览

  • CHANG Siyuan,YANG Shengsheng,WEN Xuan,et al.Experimental study on the total ionizing dose effects of nonvolatile RRAM[J].NUCLEAR TECHNIQUES,2020,43(12):65-71. DOI： 10.11889/j.0253-3219.2020.hjs.43.120502.

  •  
  •  

0

Views

25

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

No data

Related Author

No data

Related Institution

No data
0