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A fast evaluation method for ionization radiation effect of VDMOS
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
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    • A fast evaluation method for ionization radiation effect of VDMOS

    • “In the field of semiconductor devices, researchers have explored a rapid evaluation method for the radiation resistance of high-voltage VDMOS, which shortens the testing cycle through high-temperature irradiation and provides a solution for evaluating the ionizing radiation resistance of high-voltage VDMOS devices.”
    • NUCLEAR TECHNIQUES   Vol. 43, Issue 5, Article number: 050503(2020)

    • DOI：10.11889/j.0253-3219.2020.hjs.43.050503    

      CLC： TL99

    • Received：05 September 2019，

      Revised：17 December 2019，

      Published：15 May 2020

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  • CUI Shuai,WANG Yiyuan,LI Cai,et al.A fast evaluation method for ionization radiation effect of VDMOS[J].NUCLEAR TECHNIQUES,2020,43(05):49-53. DOI： 10.11889/j.0253-3219.2020.hjs.43.050503.

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