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Progress of single event effects and hardening technology of CMOS image sensors
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
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    • Progress of single event effects and hardening technology of CMOS image sensors

    • “CMOS image sensors are affected by particle irradiation in space applications. Experts have reviewed the research progress on their single particle effects, providing theoretical references for related studies.”
    • NUCLEAR TECHNIQUES   Vol. 43, Issue 1, (2020)

    • DOI：10.11889/j.0253-3219.2020.hjs.43.010502    

      CLC： TN386

    • Received：12 August 2019，

      Revised：27 November 2019，

      Published：15 January 2020

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  • CAI Yulong,LI Yudong,WEN Lin,et al.Progress of single event effects and hardening technology of CMOS image sensors[J].NUCLEAR TECHNIQUES,2020,43(01):48-56. DOI： 10.11889/j.0253-3219.2020.hjs.43.010502.

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Related Institution

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Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics
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