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Experimental study on irradiation damage dose of 180 nm CMOS MCU
NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2024-10-25
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    • Experimental study on irradiation damage dose of 180 nm CMOS MCU

    • “In the field of microprocessor radiation effect research, experts have designed an STM32 microprocessor total dose effect experiment to verify that on-chip FLASH memory is the first to damage, providing data support for radiation hardening technology.”
    • NUCLEAR TECHNIQUES   Vol. 42, Issue 11, (2019)

    • DOI：10.11889/j.0253-3219.2019.hjs.42.110401    

      CLC： TL99

    • Received：01 July 2019，

      Revised：26 September 2019，

      Published：10 November 2019

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  • CHEN Faguo,GUO Rong,LI Guodong,et al.Experimental study on irradiation damage dose of 180 nm CMOS MCU[J].NUCLEAR TECHNIQUES,2019,42(11):57-62. DOI： 10.11889/j.0253-3219.2019.hjs.42.110401.

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