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Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect
ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2024-10-25
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    • Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect

    • “In the field of radiation resistance in CMOS devices, experts used Monte Carlo methods to analyze the difference between the absorbed dose and the nominal irradiation dose of the device, evaluate the impact of secondary electron imbalance on the absorbed dose and total ionization dose effects in the sensitive area of the device, and provide solutions to improve the radiation resistance level of the device.”
    • NUCLEAR TECHNIQUES   Vol. 42, Issue 7, (2019)

    • DOI：10.11889/j.0253-3219.2019.hjs.42.070203    

      CLC： TL72

    • Received：11 April 2019，

      Revised：23 April 2019，

      Published：10 July 2019

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  • WANG Yuankun,WANG Qian,WANG Tao,et al.Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect[J].NUCLEAR TECHNIQUES,2019,42(07):1-6. DOI： 10.11889/j.0253-3219.2019.hjs.42.070203.

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