Study of the characteristics of an irradiated 4H-SiC charge particle detector
“In the field of semiconductor materials, experts use 60Co source gamma rays to irradiate 4H SiC Schottky diode detectors and observe the effect of irradiation on their electrical properties and alpha particle response energy resolution.”
NUCLEAR TECHNIQUESVol. 42, Issue 5, (2019)
作者机构:
1.长春理工大学 高功率半导体激光国家重点实验室 长春 130022
2.中国科学院高能物理研究所 粒子天体物理重点实验室 北京 100049
3.大连理工大学 微电子学院 大连 116024
4.中国科学院高能物理研究所 核探测与核电子学国家重点实验室 北京 100049
作者简介:
HAN Chong, male, born in 1993, graduated from College of Optical and Electronical Information Changchun University of Science and Technology in 2016, master student, focusing on semiconductor optoelectronic device physics
HAN Chong,CUI Xingzhu,LIANG Xiaohua,et al.Study of the characteristics of an irradiated 4H-SiC charge particle detector[J].NUCLEAR TECHNIQUES,2019,42(05):1-6.
HAN Chong,CUI Xingzhu,LIANG Xiaohua,et al.Study of the characteristics of an irradiated 4H-SiC charge particle detector[J].NUCLEAR TECHNIQUES,2019,42(05):1-6. DOI: 10.11889/j.0253-3219.2019.hjs.42.050501.
Study of the characteristics of an irradiated 4H-SiC charge particle detector