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Annealing behavior study on floating gate errors induced by γ followed by heavy ion irradiation
NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2024-10-25
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    • Annealing behavior study on floating gate errors induced by γ followed by heavy ion irradiation

    • “The Xinjiang Institute of Physics and Chemistry Technology, Chinese Academy of Sciences, used 60Co gamma ray source and Lanzhou heavy ion accelerator to conduct total dose effect and single event effect experiments on 25 nm commercial Flash memory, and analyzed the influence of total radiation dose on the error annealing characteristics of floating gate cells.”
    • NUCLEAR TECHNIQUES   Vol. 42, Issue 1, (2019)

    • DOI：10.11889/j.0253-3219.2019.hjs.42.010502    

      CLC： O571.33;TL99

    • Received：03 April 2018，

      Revised：20 August 2018，

      Published：10 January 2019

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  • YIN Yanan,LIU Jie,JI Qinggang,et al.Annealing behavior study on floating gate errors induced by γ followed by heavy ion irradiation[J].NUCLEAR TECHNIQUES,2019,42(01):49-55. DOI： 10.11889/j.0253-3219.2019.hjs.42.010502.

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