Experimental study on single event effects for CMOS APS with heavy ions

Chenguang ZHANG; Heng AN; Shengsheng YANG; Yujun MIAO; Yuxiong XUE; Zhou CAO

doi:10.11889/j.0253-3219.2018.hjs.41.110501

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Experimental study on single event effects for CMOS APS with heavy ions

NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH | 更新时间：2021-05-19

- Experimental study on single event effects for CMOS APS with heavy ions
- NUCLEAR TECHNIQUES Vol. 41, Issue 11, Article number: 110501(2018)
- 作者机构：
  
  兰州空间技术物理研究所真空技术与物理重点实验室兰州 730000
- 作者简介：
- 基金信息：
- DOI：10.11889/j.0253-3219.2018.hjs.41.110501
  CLC： TL99
- Received：26 June 2018，
  
  Revised：29 July 2018，
  
  Published：10 November 2018
- 稿件说明：
移动端阅览
Chenguang ZHANG, Heng AN, Shengsheng YANG, et al. Experimental study on single event effects for CMOS APS with heavy ions[J]. Nuclear techniques, 2018, 41(11): 110501
DOI：

Chenguang ZHANG, Heng AN, Shengsheng YANG, et al. Experimental study on single event effects for CMOS APS with heavy ions[J]. Nuclear techniques, 2018, 41(11): 110501 DOI： 10.11889/j.0253-3219.2018.hjs.41.110501.

摘要

基于新型互补金属氧化物半导体有源像素传感器（Complementary Metal Oxide Semiconductor Active Pixel Sensor，CMOS APS）光电器件的内部结构特点，分析了重离子对CMOS APS光电器件的影响，以及CMOS APS光电器件的单粒子效应敏感性。结合CMOS APS光电器件的结构特点和辐射影响分析，形成了基于监测数据逻辑状态和图像"白点"相结合的测试方法。在此基础上，利用重离子加速器进行了单粒子效应模拟试验。试验结果表明：当重离子线性能量传输（Linear Energy Transition，LET）低于9.01 MeV·cm

·mg

-1

时，像素阵列没有出现扰动现象，仅是电荷在像素阵列的不断累积。同时，试验获得单粒子翻转（Single Event Upset，SEU）饱和截面对应的LET值约为42.0 MeV·cm

·mg

-1

。

Abstract

Background

Complementary Metal Oxide Semiconductor Active Pixel Sensor (CMOS APS) photoelectric device is widely used in satelite applications with radiation exposure.

Purpose

This study aims at the radiation effects of heavy ions on CMOS APS photoelectric devices and the sensitivity of single event effects.

Methods

The internal structure characteristics and radiation effect of CMOS APS were analyzed

and a test method based on the combination of monitoring data logic state and image "white point" was formed. Then

a single event effects simulation experiment was carried out using heavy ion accelerator.

Results & Conclusion

The results show that the pixel array is not disturbed when linear energy transition (LET) of heavy ion is below 9.01 MeV·cm

·mg

-1

only the charge is accumulated in the pixel array. Heavy ion LET corresponding to single event upset (SEU) saturation cross section is 42.0 MeV·cm

·mg

-1

关键词

Keywords

references

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Related Institution

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