Simulation of characteristic of charge collecting for CMOS APS with single event effects

Heng AN; Shengsheng YANG; Yujun MIAO; Yuxiong XUE; Zhou CAO; Jun WANG; Chenguang ZHANG

doi:10.11889/j.0253-3219.2017.hjs.40.070502

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Simulation of characteristic of charge collecting for CMOS APS with single event effects

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- Simulation of characteristic of charge collecting for CMOS APS with single event effects
- NUCLEAR TECHNIQUES Vol. 40, Issue 7, Article number: 070502(2017)
- 作者机构：
  
  兰州空间技术物理研究所真空技术与物理重点实验室兰州 730000
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China
- DOI：10.11889/j.0253-3219.2017.hjs.40.070502
  CLC： TL99
- Received：01 February 2017，
  
  Revised：11 April 2017，
  
  Published：10 July 2017
- 稿件说明：
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Heng AN, Shengsheng YANG, Yujun MIAO, et al. Simulation of characteristic of charge collecting for CMOS APS with single event effects[J]. Nuclear techniques, 2017, 40(7): 070502
DOI：

Heng AN, Shengsheng YANG, Yujun MIAO, et al. Simulation of characteristic of charge collecting for CMOS APS with single event effects[J]. Nuclear techniques, 2017, 40(7): 070502 DOI： 10.11889/j.0253-3219.2017.hjs.40.070502.

摘要

卫星在轨飞行期间，星载电子器件将不可避免地遭受空间带电粒子的辐射，随着半导体技术的不断进步，电子器件的单粒子效应敏感性越来越高，已经成为一个影响其可靠性的重要因素。互补金属氧化物半导体（Complementary Metal Oxide Semiconductor Active Pixel Sensor

CMOS APS）光电器件因其低功耗、小体积和微重量的优点已成为遥感卫星成像的重要发展方向。为获取CMOS APS光电器件在遭受带电粒子辐射后性能变化的特征，在分析SOI MOSFET（Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor）结构和特性的基础上，通过理论分析和数值模拟，分析了重离子在CMOS APS光电器件中引起的辐射损伤，分析晶体管和光电二极管的电荷收集机理。通过TCAD（Technology Computer Aided Design）模拟了电荷收集过程，分析了影响漏电流变化的直接因素，获得了重离子LET（Linear Energy Transition）值、入射位置以及器件偏置电压与漏电流的相互关系，为后续CMOS APS的重离子模拟试验以及抗辐射加固设计提供了理论支撑。

Abstract

Background

Complementary metal oxide semiconductor active pixel sensor (CMOS APS) with less energy consumption

small volume and less weight is already a major development direction of imaging for remote sensing satellites. During the satellites flying on orbit

electron devices are exposed in space radiation

and degraded by space charged particles. Along with the improvement of semiconductor technology

sensibility of single event effect is more obvious

and is a key factor of reliability.

Purpose

This study aims to obtain the characteristics of CMOS APS subjected to charged particles.

Methods

Based on analysis of structure and characteristic of silicon on insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET)

radiation damage of CMOS APS irradiated by heavy ions is discussed using the method of theoretical analysis and numerical simulation. And charge collect mechanism of the transistor and photodiode is also analyzed.

Results

The procedure of charge collecting is simulated by technology computer aided design (TCAD)

and obtained the relationship between the leakage current and linear energy transition (LET)

incidence position of heavy ion

offset voltage.

Conclusion

The result could be used for CMOS APS's single event effect and also provide theoretical guide for the design of radiation hardening.

关键词

Keywords

references

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