Study on photoluminescence and Raman scattering in GaAs by ion irradiation

Di YANG; Mengli SUN; Wei YUAN; Xin DU; Haibo PENG; Tieshan WANG; Hongxia GUO

doi:10.11889/j.0253-3219.2016.hjs.39.100201

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Study on photoluminescence and Raman scattering in GaAs by ion irradiation

更新时间：2021-05-24

- Study on photoluminescence and Raman scattering in GaAs by ion irradiation
- NUCLEAR TECHNIQUES Vol. 39, Issue 10, Article number: 100201(2016)
- 作者机构：
  
  1.兰州大学核科学与技术学院兰州 730000
  2.西北核技术研究所西安 710024
- 作者简介：
- 基金信息：
  
  Supported by State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology) Special Project
- DOI：10.11889/j.0253-3219.2016.hjs.39.100201
  CLC： TL99
- Received：26 May 2016，
  
  Revised：13 July 2016，
  
  Published：2016-10
- 稿件说明：
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Di YANG, Mengli SUN, Wei YUAN, et al. Study on photoluminescence and Raman scattering in GaAs by ion irradiation[J]. Nuclear techniques, 2016, 39(10): 100201
DOI：

Di YANG, Mengli SUN, Wei YUAN, et al. Study on photoluminescence and Raman scattering in GaAs by ion irradiation[J]. Nuclear techniques, 2016, 39(10): 100201 DOI： 10.11889/j.0253-3219.2016.hjs.39.100201.

摘要

利用250 keV质子和4.5 MeV氪离子（Kr

17+

）辐照未掺杂GaAs，注量分别为1

#215;10

-3

#215;10

-2

和1

#215;10

-3

#215;10

-2

，使用光致发光谱和拉曼散射谱分析表征。发光谱的结果表明，随着剂量增大，质子辐照后的C

峰及其声子伴线逐渐减弱，913 nm处的复合缺陷峰则先增大后减小，此峰与材料制备时的Cu掺杂无关。Kr离子辐照后本征发光峰则完全消失。拉曼散射谱的结果表明，相比于质子辐照，Kr离子辐照后LO声子峰峰位向低频方向移动，出现非对称性展宽，晶体结构发生明显改变。质子和Kr离子辐照效应的差异是由于移位损伤相差至少三个量级造成的。最后采用多级损伤累积（Multi-step damage accumulation，MSDA）模型得到了材料内缺陷的演化过程，并很好地解释了随损伤剂量增大GaAs光学性能及晶体结构的变化趋势。

Abstract

Background:

GaAs is widely used as the second generation semiconductor material in the fields of aerospace and radiation detection.

Purpose:

Study of the irradiation effects of GaAs is of guiding significance for the evaluation of the radiation resistance of GaAs devices.

Methods:

Semi-insulating GaAs were irradiated by 250-keV H+ and 4.5-MeV Kr

17+

ions with fluences ranging respectively from 1

#215;1012 cm

-2

to 3

#215;1014 cm

-2

and 3

#215;1011 cm

-2

to 3

#215;1014cm

-2

. Photoluminescence (PL) spectrum and Raman scattering spectra were used to measure GaAs samples before and after irradiation.

Results:

PL spectrum shows that the intensity of C

peaks and phonon replicas decrease with increasing fluence of H+ irradiation. The IGa-VAs peak in 913 nm was increased at lower fluence and decreased at higher fluences. But all the peaks completely disappeared with Kr

17+

irradiation. The results of Raman spectra show that the longitudinal-optical (LO) phonon peak at 295-cm

-1

slides towards the low-frequency side and broadens its width asymmetrically by Kr

17+

irradiation

while it has no obvious change by proton irradiation.

Conclusion:

The difference between the effect of proton and Kr

17+

irradiation is due to the difference of the displacement damage by three orders of magnitude at least. The evolution process of damage defects in GaAs is obtained by using Multi-step damage accumulation (MSDA) model

and then the trends of optical properties and crystalline structure are well explained.

关键词

Keywords

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