Design of a 250-MHz solid-state power amplifier

Hongli DING; Minghua ZHAO; Chengcheng XIAO; Shaopeng ZHONG

doi:10.11889/j.0253-3219.2016.hjs.39.060401

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Design of a 250-MHz solid-state power amplifier

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-05-24

- Design of a 250-MHz solid-state power amplifier
- NUCLEAR TECHNIQUES Vol. 39, Issue 6, Article number: 060401(2016)
- 作者机构：
  
  1.中国科学院上海应用物理研究所嘉定园区上海 201800
  2.中国科学院大学北京 100049
- 作者简介：
- 基金信息：
  
  Supported by the Knowledge Innovation Project of Chinese Academy of Sciences (No.455011061)
- DOI：10.11889/j.0253-3219.2016.hjs.39.060401
  CLC： TL503.5
- Received：27 January 2016，
  
  Revised：12 April 2016，
  
  Published：2016-06
- 稿件说明：
移动端阅览
Hongli DING, Minghua ZHAO, Chengcheng XIAO, et al. Design of a 250-MHz solid-state power amplifier[J]. Nuclear techniques, 2016, 39(6): 060401
DOI：

Hongli DING, Minghua ZHAO, Chengcheng XIAO, et al. Design of a 250-MHz solid-state power amplifier[J]. Nuclear techniques, 2016, 39(6): 060401 DOI： 10.11889/j.0253-3219.2016.hjs.39.060401.

摘要

固态功率源代替真空管功率源设备是目前射频功率源系统的发展趋势。本文介绍了一台工作在250MHz的固态功率放大器模块的设计过程。放大器模块使用荷兰恩智浦半导体公司生产的BLF578XR型号晶体管

并且采用传输线匹配和集总元件匹配相结合的方式进行设计。通过理论计算得到匹配网络的初始值

并利用ADS (Advanced Design System)软件对匹配电路进行仿真和优化。测试结果表明

该功率放大器模块输出功率达到了850 W

功率增益达到了26 dB

功率附加效率达到60%。结果表明

该设计完全达到了系统设计要求的性能指标

并具有较强的实用性。

Abstract

Background

The development trend of radio frequency power source systems is to replace vacuum power source devices with solid-state power amplifiers.

Purpose

This paper introduces the design process of a solid-state power amplifier operating at a frequency of 250 MHz.

Methods

A BLF578XR transistor manufactured by NXP semiconductor has been used in the amplifier model. The design of matching network adopts the method of combining transmission lines and lumped elements. The initial value in matching network was achieved through theoretical calculation

then simulated and optimized by the software ADS (Advanced Design System).

Results

The results of measurement showed that the output power of power amplifier module was over 850 W

power gain was over 26 dB

and power added efficiency was over 60%.

Conclusion

The designed parameters were all achieved in the power amplifier module

which can be further applied in scientific use.

关键词

Keywords

references

Godefroy J M, Ribeiro F, Ruan T, et al. MOSFET RF power amplifier for accelerator applications[C]. 6th European Particle Accelerator Conference, 1998:22-26. http://epaper.kek.jp/e98/PAPERS/TUP04A.PDF

J Kühn , M Musser , F Raay , . Design and realization of GaN RF-devices and circuits from 1 to 30 GHz . International Journal of Microwave and Wireless Technologies , 2010 . 2 115 - 120 . DOI: 10.1017/S175907871000019X http://doi.org/10.1017/S175907871000019X .

P Marchand , T Ruan , F Ribeiro , . High power 352MHz solid state amplifiers developed at the synchrotron SOLEIL . Physical Review Special Topics-Accelerators and Beams , 2007 . 10 112001 DOI: 10.1103/PhysRevSTAB.10.112001 http://doi.org/10.1103/PhysRevSTAB.10.112001 .

Marchand P, Lopes R, Ribeiro F, et al. Development of high RF power solid state amplifiers at SOLEIL[C]. Proceedings of IPAC2011, San Sebastián, Spain, 2011. http://www.ipac2011.org/pre_press/MOPC127.PDF

B V Ramarao , S Sonal , J K Mishra , . Development of 3 kW at 325 MHz solid-state RF power amplifier using . Nuclear Instruments and Methods in Physics Research A , 2014 . 735 283 - 290 . DOI: 10.1016/j.nima.2013.09.053 http://doi.org/10.1016/j.nima.2013.09.053 .

M Gaspar , M Pedrozzi , L F R Ferreira , . A compact 500 MHz 4 kW solid-state power amplifier for accelerator applications . Nuclear Instruments and Methods in Physics Research A , 2011 . 637 18 - 24 . DOI: 10.1016/j.nima.2011.02.057 http://doi.org/10.1016/j.nima.2011.02.057 .

A Jain , P R Hannurkar , D K Sharma , . Design and characterization of 50 kW solid-state RF amplifier . International Journal of Microwave and Wireless Technologies , 2012 . 4 595 - 603 . DOI: 10.1017/S175907871200061X http://doi.org/10.1017/S175907871200061X .

徐兴福 . ADS2008射频电路设计与仿真实例 , : 北京电子工业出版社 , 2013 . 191 .

Xingfu XU . ADS2008 RF circuit design and simulation examples , : Beijing Electronic Industry Press , 2013 . 191 .

Pozar D M. 张肇仪, 周乐柱, 吴德明, 等, 译. 微波工程[M]. 北京:电子工业出版社, 2006:67

Pozar D M. ZHANG Zhaoyi, ZHOU Lezhu, WU Deming, et al, Tran. Microwave engineering[M]. Beijing:Electronic Industry Press, 2006:67

Grebennikov A. 张玉兴, 赵宏飞, 译. 射频与微波功率放大器设计[M]. 北京:电子工业出版社, 2006:100

Grebennikov A. ZHANG Yuxing, ZHAO Hongfei, Tran. RF and microwave power amplifier design[M]. Beijing:Electronic Industry Press, 2006:100

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