Jing SUN, Wu LU, Wei DENG, et al. Effects of radiation temperature on the radiation-sensitive parameters of bipolar linear voltage regulator[J]. Nuclear techniques, 2016, 39(2): 020203
DOI:
Jing SUN, Wu LU, Wei DENG, et al. Effects of radiation temperature on the radiation-sensitive parameters of bipolar linear voltage regulator[J]. Nuclear techniques, 2016, 39(2): 020203 DOI: 10.11889/j.0253-3219.2016.hjs.39.020203.
Effects of radiation temperature on the radiation-sensitive parameters of bipolar linear voltage regulator
Co γ电离辐射效应试验。结果表明:辐照温度的增加使三款线性稳压器输出电压的辐射损伤增大;使国家半导体公司和安森美半导体公司稳压器的线性调整率及国家半导体公司的输入电流敏感参数的辐射损伤减小。结合双极晶体管的空间辐照效应模型
对双极线性稳压器不同温度条件下的辐射损伤效应进行了分析和讨论
表明辐照温度对线性稳压器的辐射敏感参数的影响主要取决于陷阱电荷。
Abstract
Background:
2
In the complex space environment
the regulator parameter can be changed
which is a serious threat to the reliability and security of an integrated circuit system.
Purpose:
2
This study aims at the effect of temperature on the radiation-sensitive parameters of linear regulators exposed to ionizing radiation.
Methods:
2
Ion radiation effect tests were carried out at different temperature for the three regulators of the same model produced by ON Semiconductor (ONS)
National Semiconductor (NSC) and one Chinese company
respectively. The key electrical parameters of the regulator
such as output voltage
input current and line regulation
varies with total ion radiation dose range from 0 Gy to 1 000 Gy under various centigrade temperatures of 25℃
70℃ and 100℃.
Results:
2
The damage to the output voltage and the input current of the three regulators under irradiation is enhanced with the increased temperatures. The damage to line regulation of ONS and NSC regulators under irradiation at 'elevated temperature' is smaller than that at room temperature. There was no effect of temperature observed on input current of ONS regulator and line regulation of the reg
ulator provided by the Chinese company.
Conclusion:
2
The effect of temperature on radiation-sensitive parameters of the linear regulators mainly depends on trap charge.
关键词
Keywords
references
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Related Author
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ZHANG Yanwen
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LI Zhiming
HAN Jinhua
GUO Gang
YIN Qian
GUO Qi
Related Institution
School of Nuclear Science and Technology, Lanzhou University
National Radiation Application Center, China Institute of Atomic Energy
School of Precision Instrument and Opto-Electronics Engineering, Tianjin University
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemical, Chinese Academy of Sciences
Xinjiang Teachnical Institute of Physics & Chemistry, CAS, Urumqi 830011,China) 2