Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film

Dan YANG; Haidong LI; Jidong ZHANG

doi:10.11889/j.0253-3219.2016.hjs.39.020102

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Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film

更新时间：2021-05-24

- Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film
- NUCLEAR TECHNIQUES Vol. 39, Issue 2, Article number: 020102(2016)
- 作者机构：
  
  1.长春工业大学化学工程学院长春 130012;
  2.嘉兴学院材料和纺织工程学院嘉兴 314001;
  3.中国科学院长春应用化学研究所高分子物理与化学国家重点实验室长春 130022
- 作者简介：
- 基金信息：
- DOI：10.11889/j.0253-3219.2016.hjs.39.020102
  CLC： TL99;O649.1;O694.5
- Received：11 November 2015，
  
  Accepted：2015-12-03，
  
  Published：25 January 2016
- 稿件说明：
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Dan YANG, Haidong LI, Jidong ZHANG. Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film[J]. Nuclear techniques, 2016, 39(2): 020102
DOI：

Dan YANG, Haidong LI, Jidong ZHANG. Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film[J]. Nuclear techniques, 2016, 39(2): 020102 DOI： 10.11889/j.0253-3219.2016.hjs.39.020102.

摘要

用旋涂法制备了双吡咯烷酮为核的联噻吩衍生物(Diketopyrrolopyrrole-containing Oligothiophene

SMDPPEH)薄膜

并采用紫外-吸收光谱和掠入射X射线衍射方法研究了热退火过程中的微结构变化。原位热退火的紫外-吸收光谱结果表明

100℃及以上时

第二个和第三个最大吸收峰发生蓝移。掠入射X射线衍射结果表明SMDPPEH薄膜在100℃左右退火时有相变产生

并且随退火温度升高

薄膜的结晶度在增大。相应处理后的SMDPPEH薄膜的紫外-吸收光谱和掠入射X射线衍射证明了SMDPPEH薄膜这个相变保留到了降温后的薄膜中。

Abstract

Background:

Thermal annealing will enhance the performance of diketopyrrolop

yrrole-containing oligothiophene (SMDPPEH) based solar cells. However

its mechanism is unclear.

Purpose:

We investigated the variation of SMDPPEH thin film during the thermal annealing.

Methods:

The SMDPPEH thin film was spin-coated from chlorobenzene solution and characterized by ultraviolet-visible spectrophotometry (UV-VIS) absorption spectra and grazing incidence X-ray diffraction (GIXRD).

Results:

The absorption maximum (

max

) peaks of the annealed SMDPPEH thin film were at 100℃ and above blue-shifted. The GIXRD results exhibited that the intensities of (100) diffraction peaks were enhanced with increasing annealing temperatures and there was a small change in shape from dot to arc when annealing temperature was equal to or higher than 100℃ for SMDPPEH thin film.

Conclusion:

These results indicate that a phase transition is present in SMDPPEH when the annealing temperature is up to 100℃ and the crystallinity of all the films improved with the increase of annealing temperature.

关键词

Keywords

references

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