NROM total dose radiation damage effects and annealing characteristics

ZHANG Xingyao; GUO Qi; LU Wu; YU Xin

doi:10.11889/j.0253-3219.2015.hjs.38.010203

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NROM total dose radiation damage effects and annealing characteristics

更新时间：2021-03-03

- NROM total dose radiation damage effects and annealing characteristics
- NUCLEAR TECHNIQUES Vol. 38, Issue 1, Article number: 010203(2015)
- 作者机构：
  
  1. 新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室,乌鲁木齐,830011
  2. 新疆电子信息材料与器件重点实验室,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：10.11889/j.0253-3219.2015.hjs.38.010203
  CLC：
- Published：07 January 2015
- 稿件说明：
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ZHANG Xingyao, GUO Qi, LU Wu, et al. NROM total dose radiation damage effects and annealing characteristics[J]. Nuclear techniques, 2015, 38(1): 010203
DOI：

ZHANG Xingyao, GUO Qi, LU Wu, et al. NROM total dose radiation damage effects and annealing characteristics[J]. Nuclear techniques, 2015, 38(1): 010203 DOI： 10.11889/j.0253-3219.2015.hjs.38.010203.

摘要

对一款商用NROM (Nitride-Read-Only-Memory)存储器进行了钴源辐射和退火试验，研究了NROM的总剂量效应和退火特性。使用了超大规模集成电路测试系统测试了NROM的DC、AC、功能参数，分析了辐射敏感参数在辐射和退火过程中的变化规律，研究了器件功能失效和参数退化的原因。测试结果表明：界面态陷阱电荷引起了电路模块中的电荷泵和灵敏放大器MOS管阈值漂移，进而性能恶化、器件功能失效。退火期间由于界面态陷阱电荷没有发生大量退火，致使电路模块性能没有完全恢复，电流参数没有明显下降。

Abstract

Background: The total dose effect studies for the Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) have not been mainly focused on fail mechanism in circuit. Purpose: A commercial SONOS-based Nitride-Read-Only- Memory (NROM) was irradiated by 60Co γ rays and annealed

Total Ionizing Dose (TID) failure mechanism and annealing characteristics of the device were analyzed. Methods: DC

AC and function parameters of this memory were tested in radiation and annealing by VLSI test system

the radiation-sensitive parameters were obtained through analyzing the test data

and the reason for function failure was analyzed. Results: The study showed that: the threshold of MOS in charge pump and the sense amplifier were drift because of the interface trap charge

and the circuit module performance deterioration led to functional failure of the device. The current parameters were raised rapidly because leakage paths formed in Shallow Trench Isolation (STI). Conclusion: A little of interface trap charge was annealed during annealing

resulting in incomplete recovery of circuit module performance

and insignificant drop of the current parameters.Cited

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ZHANG Xingyao

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Xinjiang Institute of Physical and Chemical Technology, Chinese Academy of Sciences

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