Testing and analysis of 60Co γ ionizing radiation effects on typical flash memory

SONG Wei; QU Di; WU Qinzhi

doi:10.11889/j.0253-3219.2015.hjs.38.010202

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Testing and analysis of 60Co γ ionizing radiation effects on typical flash memory

更新时间：2021-03-03

- Testing and analysis of 60Co γ ionizing radiation effects on typical flash memory
- NUCLEAR TECHNIQUES Vol. 38, Issue 1, Article number: 010202(2015)
- 作者机构：
  
  1. 上海航天电子技术研究所,上海,201109
  2. 上海航天技术基础研究所,上海,201109
- 作者简介：
- 基金信息：
- DOI：10.11889/j.0253-3219.2015.hjs.38.010202
  CLC：
- Published：07 January 2015
- 稿件说明：
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SONG Wei, QU Di, WU Qinzhi. Testing and analysis of 60Co γ ionizing radiation effects on typical flash memory[J]. Nuclear techniques, 2015, 38(1): 010202
DOI：

SONG Wei, QU Di, WU Qinzhi. Testing and analysis of 60Co γ ionizing radiation effects on typical flash memory[J]. Nuclear techniques, 2015, 38(1): 010202 DOI： 10.11889/j.0253-3219.2015.hjs.38.010202.

摘要

通过测量卫星用FLASH存储器的内部存储数据逻辑状态出错(WW≠0)、电源电流、输出高低电平电压、输入漏电流以及交流参数随辐照剂量的变化情况，对FLASH存储器的电离辐射效应损伤规律、敏感参数进行了研究。研究结果表明，FLASH存储器的电离辐射效应损伤规律主要表现为随辐照剂量增加，存储数据逻辑状态出现错误，数据读取、数据擦除以及维持模式下的电源电流逐渐增大，这些参数可以作为辐照敏感参数；动态辐照偏置下存储数据逻辑状态出错时的剂量阈值比静态辐照偏置和不加电辐照偏置条件下大一个数量级以上。

Abstract

Background: Flash memory is a critical part of electrical system on satellite

its characteristics of antiradiation is of great significance for system design. Purpose and Methods: we need to investigate the ionizing irradiation damage and sensitive parameters through testing date logic state

power current

output voltage level

leakage current and Alternating Current parameters. Results: Date logic state appears some errors along with increasing of total radiation dose. Also power current on reading

erasing and holding status increase as radiation dose rising. The failure level on dynamic bias is one-order-magnitude higher than that on static and no power biases. Logic state and power current are sensitive parameters through the experiment results. Conclusion: Results analysis and discussion on the radiation damage phenomenon would provide a theoretical basis and method on comprehensive radiation evaluation of flash memories. Abstract

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