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1. 中国科学院上海应用物理研究所 张江园区,上海,201204
2. 中国科学院大学,北京,100049
Published:19 February 2014
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YANG Yingguo, ZHENGGUAN Haojie, JI Gengwu, et al. P3HT/PCBM polymer thin films studied by synchrotron-based grazing incidence X-ray diffraction[J]. Nuclear techniques, 2014, 37(2): 020101
YANG Yingguo, ZHENGGUAN Haojie, JI Gengwu, et al. P3HT/PCBM polymer thin films studied by synchrotron-based grazing incidence X-ray diffraction[J]. Nuclear techniques, 2014, 37(2): 020101 DOI: 10.11889/j.0253-3219.2014.hjs.37.020101.
以聚己基噻吩(poly(3-hexyl-thiophene)
P3HT)为电子给体材料和富勒烯的衍生物([6
6]-phenyl C61-butyric acid methyl ester
PCBM)为电子受体材料的有机光伏器件,其活性层中P3HT的结构有序性是制约器件光电转换性能的重要因素。本文采用同步辐射掠入射X射线衍射(Grazing Incidence X-ray Diffraction
GIXRD)方法,研究有机聚合物P3HT/PCBM薄膜经过不同的温度退火后P3HT在薄膜中不同深度处的微结构变化。一维面外GIXRD实验结果表明:退火处理使大量的PCBM分子扩散至薄膜表层,从而增大了薄膜表层P3HT分子edge-on结构的层间距和改善了晶粒倾斜程度;退火处理使得薄膜内部P3HT分子edge-on结构结晶性和有序性得到明显改善。然而,退火处理并没有明显增加薄膜表层和薄膜/衬底界面处的P3HT分子edge-on结构的结晶性。二维GIXRD实验结果表明:退火处理可以明显增加薄膜中P3HT分子edge-on结构结晶性、有序性以及晶粒取向的广泛分布;退火处理也使薄膜沿面内方向出现了结晶性较好的face-on结构。以上结果揭示出退火处理有利于薄膜表面、内部以及薄膜/衬底界面处形成更多且更有序的微相异质节和二维电荷传输通道,大大增强光生激子的分离效率和载流子沿P3HT分子链的迁移速率,这对理解退火处理提高P3HT/PCBM薄膜光伏器件的光电转换性能具有重要意义。
Background: The microstructures of P3HT (poly(3-hexyl-thiophene)) in P3HT/PCBM ([6
6]-phenyl C61-butyric acid methyl ester) thin films play a key role in governing the performance of organic solar cells (OSCs) based on these films. Purpose: We aim to study the self-organization of P3HT in the P3HT/PCBM thin films annealed at different temperatures. Methods: Using different incidence angles
information about the microstructures of P3HT at different depths in these films was obtained by synchrotron based grazing incidence X-ray diffraction (GIXRD). Results: It is shown that the crystalline structure of P3HT has been substantially improved by thermal annealing. One dimensional GIXRD clearly indicates that P3HT edge-on structures in the inner layers have been improved with their number increased in comparison with those at the surface and the interface layers. In addition
thermal annealing also helps the formation of P3HT face-on structures in the films
as evidenced by 2 dimensional GIXRD. Conclusion: The improved structures in these films lead to more charge transport channels formed to improve the carrier mobility
which in turn helps the improvement of OSCs. Thus
the present GIXRD results will improve the understanding of annealing effects at different depths of the P3HT/PCBM thin films for enhanced OSCs devices.Cited
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