Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface

WU Zhengxin 1; 3 HE Chengfa 2; 3 LU Wu 2; 3 GUO Qi 2; 3 ARKIN Abulim 1 YU Xin 2; 3 ZHANG Lei 2; 3 DENG Wei 2; 3 ZHENG Qiwen 2; 3 1

doi:10.11889/j.0253-3219.2013.hjs.36.060201

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Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface

更新时间：2021-03-05

- Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface
- NUCLEAR TECHNIQUES Vol. 36, Issue 6, Article number: 060201(2013)
- 作者机构：
  
  1. 新疆大学物理科学与技术学院
  2. 中国科学院新疆理化技术研究所
  3. 新疆电子信息材料与器件重点实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10775178)资助
- DOI：10.11889/j.0253-3219.2013.hjs.36.060201
  CLC： TL501
- Published：01 June 2013
- 稿件说明：
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WU Zhengxin 1, 3 HE Chengfa 2, 3 LU Wu 2, et al. Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface[J]. Nuclear techniques, 2013, 36(6): 060201
DOI：

WU Zhengxin 1, 3 HE Chengfa 2, 3 LU Wu 2, et al. Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface[J]. Nuclear techniques, 2013, 36(6): 060201 DOI： 10.11889/j.0253-3219.2013.hjs.36.060201.

摘要

本文以光子与物质的相互作用机制为基础

论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布

通过MCNP5程序建立了一个三维的金硅界面结构模型

计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明:当X射线为30–300 keV时

界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果

当金的厚度为0–10 m时

剂量增强因子随金的厚度增大;当金的厚度超过10 m后

剂量增强因子随金厚度的增加而减少。

Abstract

Background: The dose enhancement factor of X-ray was found in 1970s

because of its bad damage to electronic devices.Purpose: This paper is mainly to calculate the dose-enhancement factor at Au/Si interfaces.Methods: The gradient distribution of dose with X-rays has been studied at and near the interface of Au/Si by Monte-Carlo simulation of particle transportation.The mechanism of dose enhancement is discussed based on the principles of interaction of photon with matter.A 3D Au/Si model has been established by MCNP5 program and the dose-enhancement factors of different thicknesses Au/Si interfaces were calculated by Monte Carlo method.Results: The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30–300 keV.Conclusions: When the thickness of Au is 0–10 m

dose-enhancement factor of X-ray increases along with the increase of the thickness of Au

when the thickness of Au exceeds 10 m

dose-enhancement factor of X-ray decreases along with the increase of the thickness of Au.

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