This paper reported the new technology on controlling the minority carrier life time of fast diode by using high energy 12 MeV electronic radiation

discussed the influence of high-energy electron irradiation to the device’s reverse recovery time trr and positive peak pressure drop VFM

and studied the nature of the defects’ energy level.Application results show that the defect level introduced by irradiation directly cause the VFM and trr’s change

this technology can successfully replace the traditional technique of gold doped process

and have a lot of advantages such as high control precision

high consistency of trr and VFM

repeatability

high percent of pass and simple process

so this technology has promising future.