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1. 中国科学院上海冶金研究所
2. 常州半导体厂
Published:01 January 1991
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[1]林成鲁,李金华,金雨青,林梓鑫,邹世昌.γ射线辐照对MOS/SIMNI器件电学性能的影响[J].核技术,1991(01):13-16.
Lin Chenglu Lin Zixin Zou Shichang. Influence of y-ray irradiation on electrical properties of MOS/SIMNI devices[J]. Nuclear techniques, 1991, (1): 13-16.
利用N
+
注入形成的SIMNI与激光再结晶的SOI材料制作了MOS器件
比较研究了
60
Co γ射线辐照对两种SOI材料制作的MOS器件电学性能的影响。
SIMNI materials were produced by a N+ implantation(170keVt 1.8 × 1013/cm2)
high temperature annealing and vapor phase epitaxial growth process. MOS devices were fabricated on SIMNI and Ar+ laser recrystallized SOI materials respectively. The electrical properties and the radiation characteristics of these devices after 60Co γ-ray irradiation were compared.
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