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兰州大学
Published:01 January 1991
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[1]刘正民,钟鹤立,杨坤山.MeVF离子辐照引起的Sb、Ag、Cu、Pd、Ni薄膜在Si基底上的增强附着[J].核技术,1991(01):54-57.
Liu Zhengmin Zhong Heli Yang Kunshan. Enhanced adhesion induced by MeV F ions for Sb, Ag, Cu, Pd and Ni films on Si[J]. Nuclear techniques, 1991, (1): 54-57.
用6MeV F离子束辐照了淀积在Si单晶基底上的Sb、Ag、Cu、Pd和Ni金属薄膜
并用胶带法对不同辐照剂量的各点进行了增强附着阈剂量的测量。结果表明
金属薄膜增强附着阈剂量的大小可能和膜材料的弹性模量有关。弹性模量大的金属薄膜对应的增强附着的阈剂量也大。对这一现象
应用离子束轰击前后薄膜内部应力改变的观点给予了定性解释。
Sb
Ag
Cu
Pd and Ni films deposited on Si substrates were irradiated with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose. It was found that the threshold dose might be associated with the elasticity modulus of metallic film. For a film having a larger value of elasticity modulus
the threshold dose is higher. This phenomenon is qualitatively explained in terms of the stress changes in the film before and after irradiation.
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