Defects in （100） Si implanted with 147 keV

2 ×1015/cm2 BF2+ at room temperature were studied as a function of the implant current. The beam current varied from 20 to 140μA （dose rate 0. 41-2. 86μA/cm2）. Using the grazing angle RBS-channeiing （scattering angle θ= 97°） instead of the conventional one （θ=165°）

details of the damage distribution in near surface region （10-100nm depth） were analyzed. It was demonstrated that at an interested beam current no thermally-induced defect annealing was observed in bulk region while in near surface region （-30nm） the molecular effects would contribute to the beam current effects observed.