Studies of Hg+ implantation effects on doped SBN crystals

Wang Guanghou Zhang Haiqian Luo Chenglin

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Studies of Hg+ implantation effects on doped SBN crystals

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- Studies of Hg+ implantation effects on doped SBN crystals
- NUCLEAR TECHNIQUES Issue 10, (1991)
- 作者机构：
  
  1. 南京大学
  2. 山东大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 October 1991
- 稿件说明：
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[1]王广厚,张海黔,罗成林,王克明,刘进田.掺杂铌酸锶钡晶体注入Hg~+离子效应的研究[J].核技术,1991(10):623-627.

Wang Guanghou Zhang Haiqian Luo Chenglin. Studies of Hg+ implantation effects on doped SBN crystals[J]. Nuclear techniques, 1991, (10): 623-627.
[1]王广厚,张海黔,罗成林,王克明,刘进田.掺杂铌酸锶钡晶体注入Hg~+离子效应的研究[J].核技术,1991(10):623-627. DOI：

Wang Guanghou Zhang Haiqian Luo Chenglin. Studies of Hg+ implantation effects on doped SBN crystals[J]. Nuclear techniques, 1991, (10): 623-627. DOI：

摘要

通过X射线衍射实验和介电常数的温度特性实验

观察了掺入稀土元素和碱金属元素的铌酸锶钡晶体注入Hg

离子前后的变化情况。结果表明:注入Hg

离子后

X射线衍射峰的强度有所减小;PrSBN晶体的衍射图样变化异常;表征晶体相变的弥散程度的介电临界指数γ增大。

Abstract

Obvious changes have been observed in the Hg+-implanted SBN crystals doped with rare-earths and alkaline metal by X-ray diffraction and temperature-dependence measurements of the dielectric constant

namely

（1） decrease in intensities of X ray diffraction

（2） anomaly of the diffraction patterns for Hg+-implanted PrSBN

and （3） increase in critical exponents of the dielectric constants.

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