Determination of damage sensitivity in the study of ionizing radiation damage equivalence in CMOS devices

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- Determination of damage sensitivity in the study of ionizing radiation damage equivalence in CMOS devices
- NUCLEAR TECHNIQUES Issue 12, (1991)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 December 1991
- 稿件说明：
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[1]何承发,周光文,魏锡智.CMOS器件电离辐射损伤等效研究中损伤敏感性的确定[J].核技术,1991(12):750-755.

He Chengfa Zhou Guangwen Wei Xizhi. Determination of damage sensitivity in the study of ionizing radiation damage equivalence in CMOS devices[J]. Nuclear techniques, 1991, (12): 750-755.
[1]何承发,周光文,魏锡智.CMOS器件电离辐射损伤等效研究中损伤敏感性的确定[J].核技术,1991(12):750-755. DOI：

He Chengfa Zhou Guangwen Wei Xizhi. Determination of damage sensitivity in the study of ionizing radiation damage equivalence in CMOS devices[J]. Nuclear techniques, 1991, (12): 750-755. DOI：

损伤敏感性是CMOS器件的电离辐射损伤等效研究中的一个特征参量

这个参量是辐照总剂量、剂量率、辐射类型、能量、管子类型、偏置条件、电源电压等的复杂函数。本文主要研究总剂量和剂量率响应特性。实验证实

CMOS器件的损伤敏感性与电离辐照的总剂量基本无关

对剂量率的依赖也很弱。

Damage sensitivity

a characteristic parameter in the study of ionizing radiation damage equivalence in CMOS devices

is a complex function of total dose

dose rate

radiation source

particle energy

supply voltage

gate bias and transistor type. In this paper mainly reported is the responses of total dose and dose rate. Under our experimental conditions

it is found that damage sensitivity for CMOS devices is almost independent of total dose and only have a weak dependence on dose rate.

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