Radiation effects and recovering properties of CMOS operational amplifier LF7650 irradiated by 1MeV electrons

Lu Wu  Guo Qi  Yu Xuefeng  Zhang Guoqiang  Ren Diyuan  Yan Rongliang

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Radiation effects and recovering properties of CMOS operational amplifier LF7650 irradiated by 1MeV electrons

更新时间：2021-04-09

- Radiation effects and recovering properties of CMOS operational amplifier LF7650 irradiated by 1MeV electrons
- NUCLEAR TECHNIQUES Issue 12, (1997)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL821
- Published：01 December 1997
- 稿件说明：
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[1]陆妩,郭旗,余学锋,张国强,任迪远,严荣良.CMOS 运算放大器的总剂量辐射响应和时间退火特性[J].核技术,1997(12):50-53.

Lu Wu Guo Qi Yu Xuefeng Zhang Guoqiang Ren Diyuan Yan Rongliang. Radiation effects and recovering properties of CMOS operational amplifier LF7650 irradiated by 1MeV electrons[J]. Nuclear techniques, 1997, (12).
[1]陆妩,郭旗,余学锋,张国强,任迪远,严荣良.CMOS 运算放大器的总剂量辐射响应和时间退火特性[J].核技术,1997(12):50-53. DOI：

Lu Wu Guo Qi Yu Xuefeng Zhang Guoqiang Ren Diyuan Yan Rongliang. Radiation effects and recovering properties of CMOS operational amplifier LF7650 irradiated by 1MeV electrons[J]. Nuclear techniques, 1997, (12). DOI：

摘要

对ＣＭＯＳ运算放大器ＬＦ７６５０进行了１ＭｅＶ电子的电离辐照实验，研究了ＬＦ７６５０的总剂量电离辐射响应特性和抗总剂量辐射水平，并通过研究其辐照后在室温和１００℃高温条件下电离辐照敏感参数随时间的变化关系，分析了在电离辐射环境下ＣＭＯＳ运算放大器的损伤机制及参数失效机理。

Abstract

The CMOS operational amplifier LF7650 was exposed to 1MeV electrons

and its radiation response to total dose level of electrons were investigated. The mechanisms of radiation damage and performance failure discussed in terms of recovery of the radiation susceptive characteristics in relations with time after irradiation.

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Related Author

陆妩

任迪远

郭旗

余学锋

范隆

张国强

严荣良

Ren Diyuan Yu Xuefeng Guo Qi Lu Wu Yan Rongliang

Related Institution

Xinjiang Institute of Physics, the Chinese Academy of Sciences

School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China) 2

University of Chinese Academy of Sciences

Shanghai Advanced Research Institute, Chinese Academy of Sciences

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