Investigation of defects produced by low energy As￣+

WENG Huimin1; 2 HUANG Qianfeng1 DU Gang1 HAN Rongdian1; 2 1

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Investigation of defects produced by low energy As￣+

更新时间：2021-04-09

- Investigation of defects produced by low energy As￣+
- NUCLEAR TECHNIQUES Issue 2, (1998)
- 作者机构：
  
  1. 中国科学技术大学
  2. 中国科学院上海冶金研究所
  3. 中国科学技术大学中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL503.3
- Published：01 February 1998
- 稿件说明：
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[1]翁惠民,黄千峰,杜罡,韩荣典.低能As~+注入Si(100)产生缺陷的研究[J].核技术,1998(02):109-112.

WENG Huimin1, 2 HUANG Qianfeng1 DU Gang1 HAN Rongdian1, 2 1. Investigation of defects produced by low energy As￣+[J]. Nuclear techniques, 1998, (2).
[1]翁惠民,黄千峰,杜罡,韩荣典.低能As~+注入Si(100)产生缺陷的研究[J].核技术,1998(02):109-112. DOI：

WENG Huimin1, 2 HUANG Qianfeng1 DU Gang1 HAN Rongdian1, 2 1. Investigation of defects produced by low energy As￣+[J]. Nuclear techniques, 1998, (2). DOI：

摘要

介绍了用慢正电子束探针研究Ａａ＋以不同角度注入Ｓｉ（１００）产生的缺陷以及退火后缺陷清除效应的结果。用正电子的Ｄｏｐｐｌｅｒ展宽湮没技术对样品作无损检测，采用一维的扩散方程进行拟合，对缺陷分布求解，获得缺陷的各种信息。实验结果表明，１５°小角度注入产生的缺陷浓度比６０°注入的要大，而且两者的缺陷类型也不同；对于１５°注入产生的缺陷可用快速热退火很好地消除

Abstract

Si（100） samples were implanted with low energy As + ions at different incident angles and followed by rapid thermal annealing. The defects in Si（100） were measured by Doppler broadening of positron annihilation. The distribution of defects is solved by simulating a one dimensional diffusion equation. The density of defects produced by 15. implantation of As + is higher than that by 60° implantation

and the types of defects are different. The defects produced by 15°implantation can be eliminated effectively by rapid thermal annealing.

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