A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique

WANG Chunrui LUO Qi FAN Zhiguo LI Anli GOU- Zhenhui ZHENG Shengnan QIAN Jiayu Zhu Shengyun

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A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique

更新时间：2021-04-09

- A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique
- NUCLEAR TECHNIQUES Issue 2, (1998)
- 作者机构：
  
  1. 中国原子能科学研究院
  2. 北京有色金属研究总院
  3. 中国原子能科学研究院北京有色金属研究总院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL364.4
- Published：01 February 1998
- 稿件说明：
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[1]王春瑞,罗起,苑志国,李安利,勾振辉,邦胜男,钱嘉裕,朱升云.5.0MeV和9.5MeV快中子辐照在GaAs中产生的辐射损伤的正电子湮没研究[J].核技术,1998(02):117-119+121.

WANG Chunrui LUO Qi FAN Zhiguo LI Anli GOU- Zhenhui ZHENG Shengnan QIAN Jiayu Zhu Shengyun. A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique[J]. Nuclear techniques, 1998, (2).
[1]王春瑞,罗起,苑志国,李安利,勾振辉,邦胜男,钱嘉裕,朱升云.5.0MeV和9.5MeV快中子辐照在GaAs中产生的辐射损伤的正电子湮没研究[J].核技术,1998(02):117-119+121. DOI：

WANG Chunrui LUO Qi FAN Zhiguo LI Anli GOU- Zhenhui ZHENG Shengnan QIAN Jiayu Zhu Shengyun. A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique[J]. Nuclear techniques, 1998, (2). DOI：

摘要

采用正电子湮没寿命测量方法研究了５．０ＭｅＶ和９．５ＭｅＶ快中子辐照在ＧａＡｓ中产生的辐射损伤，实验结果表明１０１１－１０１２ｎ／ｃｍ２注量的中子辐照只产生单空位缺陷，而１０１３ｎ／ｃｍ２注量的中子辐照产生单空位和双空位缺陷；１０１８ｎ／ｃｍ２注量的９．５ＭｅＶ中子辐照的ＧａＡｓ经４５０－６２０℃退火产生三空位缺陷。产生的缺陷浓度随中子能量和注量的增大而增大，但缺陷产生率对中子注量更灵敏

Abstract

The positron annihilation lifetime technique has been used to study the radiation damages in N-type HB GaAs single crystal induced by 5 .0MeV and 9.5MeV fast neutron irradiations. lt was shown that the 1013n/cm2 irradiation created mono-and di- vacancies while the 1011- 1012 n/cm2 irradiation produced mono-vacancies only Moreover

the higher the neutron energy and fluence

the higher the concentration of the produced defects

and the production rate of defects is more sensitive to fluence than to energy. The annealing behavior of defects was also investigated up to 750℃. Tri- vacancies were formed between 450℃ and 620℃ in GaAs irradiated by 9.5MeV neutrons with a fluence of 1013n/cm2.

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