Positron annihilation study of defects in fission neutron irradiated GaAS

LI Anli LUO Qi FAN Zhiguo ZHENG Shengnan GOU Zhenhui WANG Chunrui QIAN Jiayu ZHU Shengyun

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Positron annihilation study of defects in fission neutron irradiated GaAS

更新时间：2021-04-09

- Positron annihilation study of defects in fission neutron irradiated GaAS
- NUCLEAR TECHNIQUES Issue 2, (1998)
- 作者机构：
  
  中国原子能科学研究院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL64
- Published：01 February 1998
- 稿件说明：
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[1]李安利,罗起,范志国,郑胜男,勾振辉,王春瑞,钱嘉裕,朱升云.裂变快中子辐照在GaAs中产生缺陷的正电子湮没研究[J].核技术,1998(02):102-104.

LI Anli LUO Qi FAN Zhiguo ZHENG Shengnan GOU Zhenhui WANG Chunrui QIAN Jiayu ZHU Shengyun. Positron annihilation study of defects in fission neutron irradiated GaAS[J]. Nuclear techniques, 1998, (2).
[1]李安利,罗起,范志国,郑胜男,勾振辉,王春瑞,钱嘉裕,朱升云.裂变快中子辐照在GaAs中产生缺陷的正电子湮没研究[J].核技术,1998(02):102-104. DOI：

LI Anli LUO Qi FAN Zhiguo ZHENG Shengnan GOU Zhenhui WANG Chunrui QIAN Jiayu ZHU Shengyun. Positron annihilation study of defects in fission neutron irradiated GaAS[J]. Nuclear techniques, 1998, (2). DOI：

摘要

采用正电子湮没寿命测量方法研究了注量为６５×１０１５／ｃｍ２和１．４×１０１４／ｃｍ２、Ｅｎ≥１ＭｅＶ的裂变快中子辐照在掺Ｓｉ、Ｎ型单晶ＧａＡｓ中产生的缺陷。此辐照在ＧａＡｓ中产生单空位和双空位缺陷。缺陷浓度正比于辐照注量，高温退火产生王空位缺陷及小空位团。单空位、双空位和三空位缺陷的退火温度分别为２５０．４５０．６５０℃

Abstract

Defects in the Si- doped

N- type HB GaAs single cryatal irradiated by En≥1MeV fission neutrons with a fluence of 6.5 × 1015/cm2 and 1.4 × 1014/cm2 respectively have been investigated using the positron annihilation lifetime technique. The mono- and di- vacancies were created by the irradiation and the tri- vacancies were formed during annealing. The concentration of

defects was proportional to the irradiating neutron fluence . Three annealing stages were observed at 250

450 and 650℃ corresponding to the mono-

di-and tri-vacancies

respectively.

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清华大学天津机电部４６所中国原子能科学研究所

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