A study of positron mobility in GaAs by the Monte Carlo simulation

YU Weizhong YANG Pengyuan YANG Jinhui LI Xingzhong

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A study of positron mobility in GaAs by the Monte Carlo simulation

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- A study of positron mobility in GaAs by the Monte Carlo simulation
- NUCLEAR TECHNIQUES Issue 2, (1998)
- 作者机构：
  
  清华大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL329.2
- Published：01 February 1998
- 稿件说明：
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[1]郁伟中,杨鹏远,杨劲辉,李兴中.用蒙特卡洛方法计算砷化镓中的正电子迁移率[J].核技术,1998(02):65-67.

YU Weizhong YANG Pengyuan YANG Jinhui LI Xingzhong. A study of positron mobility in GaAs by the Monte Carlo simulation[J]. Nuclear techniques, 1998, (2).
[1]郁伟中,杨鹏远,杨劲辉,李兴中.用蒙特卡洛方法计算砷化镓中的正电子迁移率[J].核技术,1998(02):65-67. DOI：

YU Weizhong YANG Pengyuan YANG Jinhui LI Xingzhong. A study of positron mobility in GaAs by the Monte Carlo simulation[J]. Nuclear techniques, 1998, (2). DOI：

摘要

用计算机模拟的方法获得正电子在半导体材料中的迁移率。讨论了正电子有效质量、杂质浓度和温度对正电子迁移率的影响

Abstract

A program of Monte Carlo simulation has been designed to study the positron transport in GaAs. The influences of effective mass

impurity concentration and temperature on positron mobility have been discussed.

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