^The latent track etching of PET films irradiated by 40 Ar ions

SUN Youmei LI Changlin LIU Gang MA FengJIN Yunfan LIU Jie HOU Mingdong

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^The latent track etching of PET films irradiated by 40 Ar ions

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- ^The latent track etching of PET films irradiated by 40 Ar ions
- NUCLEAR TECHNIQUES Issue 1, (1998)
- 作者机构：
  
  中国科学院近代物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL81
- Published：01 January 1998
- 稿件说明：
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[1]孙友梅,李长林,刘刚,马峰,金运范,刘杰,候明东.高能Ar离子辐照聚酯薄膜潜径迹蚀刻[J].核技术,1998(01):27-30.

SUN Youmei LI Changlin LIU Gang MA FengJIN Yunfan LIU Jie HOU Mingdong. ^The latent track etching of PET films irradiated by 40 Ar ions[J]. Nuclear techniques, 1998, (1).
[1]孙友梅,李长林,刘刚,马峰,金运范,刘杰,候明东.高能Ar离子辐照聚酯薄膜潜径迹蚀刻[J].核技术,1998(01):27-30. DOI：

SUN Youmei LI Changlin LIU Gang MA FengJIN Yunfan LIU Jie HOU Mingdong. ^The latent track etching of PET films irradiated by 40 Ar ions[J]. Nuclear techniques, 1998, (1). DOI：

摘要

通过对０００ＭｅＶＡｒ离子辐照聚酯（ＰＥＴ）薄膜潜径迹蚀刻过程的研究，给出了表征ＰＥＴ聚合物材料特性的径迹可蚀刻性的能损阈值（ｄＥ／ｄＸ）ｃ，并通过不同方法讨论了ＰＥＴ膜的径迹蚀刻速度和体蚀刻速度。

Abstract

The energy loss effect in the latent track etching process of PET films irradiated by 900MeV argon ions is discussed. The critical energy-Ioss rate （dE/dX）. which is characteristic of the material（PET） is also given. The bulk etching rate Vb and track etching rate Vt are obtained with different methods.

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