Ion beam synthesis of C-N crystalline film and its analysis

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Ion beam synthesis of C-N crystalline film and its analysis

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- Ion beam synthesis of C-N crystalline film and its analysis
- NUCLEAR TECHNIQUES Issue 6, (1998)
- 作者机构：
  
  1. 北京大学,北京
  2. 华中理工大学,武汉
  3. ,430074
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484
- Published：01 June 1998
- 稿件说明：
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[1]姚淑德,陈守元,马军,张亚伟,丰伟静,王雪梅,吴名枋,唐超群.C-N多晶的离子束合成及分析[J].核技术,1998(06):354-356.

Ion beam synthesis of C-N crystalline film and its analysis[J]. Nuclear techniques, 1998, (6): 354-356.
[1]姚淑德,陈守元,马军,张亚伟,丰伟静,王雪梅,吴名枋,唐超群.C-N多晶的离子束合成及分析[J].核技术,1998(06):354-356. DOI：

Ion beam synthesis of C-N crystalline film and its analysis[J]. Nuclear techniques, 1998, (6): 354-356. DOI：

摘要

介绍了用离子束合成法研制新型材料β－C3N4的条件及过程，用RBS、XRD等手段分析研究该方法生成物的配比、结构和物相，观察到CN化合物多晶。

Abstract

The carbon nitride crystalline thin film formed by N+ implantation into the carbon film deposited on the Si（100） substrate is reported. The hoplanted film was characterized by Rutherford backscattering spectrometry （RBS） and X-ray diffraction （XRD）. The RBS result shows the film containing about 70% of C and 30% of N. The XRD spectrum indicates the existence of C-N crystalline phase in the film.

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