Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam

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Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam

更新时间：2021-04-09

- Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam
- NUCLEAR TECHNIQUES Issue 9, (1998)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 西北核技术研究所
  3. 中国科学院新疆物理研究所西北核技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：01 September 1998
- 稿件说明：
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[1]范隆,靳涛,何承发,严荣良,沈志康.pMOS场效应管的X射线和低能强电子束的瞬态电离辐照效应[J].核技术,1998(09):534-538.

Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam[J]. Nuclear techniques, 1998, (9).
[1]范隆,靳涛,何承发,严荣良,沈志康.pMOS场效应管的X射线和低能强电子束的瞬态电离辐照效应[J].核技术,1998(09):534-538. DOI：

Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam[J]. Nuclear techniques, 1998, (9). DOI：

摘要

对电离辐照敏感的厚氧化层ｐＭＯＳ场效应管进行了Ｘ射线和低能强流电子束的瞬态辐照实验；通过对阈电压漂移的跟踪监测，研究了ｐＭＯＳ场效应管的瞬态电离辐照效应。运用辐射感生氧化物、界面缺陷模型并结合ＭＯＳ器件寄生二极管等效电路模型解释了实验结果。

Abstract

The pMOS FETs with thick oxide layer were irradiated with transient X-rays or intensive pulsed low energy electron beam

and the radiation effects were investigated by continuous measurement of the threshold voltage. The experimental . results were interpreted by means of the irradiation-induced oxide traps and interface traps in MOS structure

and the equivalent diode circuits of pMOS FETs under transient irradiation.

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The effects of gate oxide thickness on radiation damage in MOS system

Related Author

Hui Zhu

Rongliang Yan

Yu Wang

Jinming He

Related Institution

Xinjiang Institute of Physics, Academia Sinica

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