Surface modification  of sapphire  implanted  with indium ions

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Surface modification of sapphire implanted with indium ions

更新时间：2021-04-09

- Surface modification of sapphire implanted with indium ions
- NUCLEAR TECHNIQUES Issue 9, (1998)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.3
- Published：01 September 1998
- 稿件说明：
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[1]谢东珠,朱德彰,曹建清,曹德新,潘浩昌,徐洪杰.In~+离子注入蓝宝石(α-A1_2O_3单晶)的表面改性研究[J].核技术,1998(09):513-518.

Surface modification of sapphire implanted with indium ions[J]. Nuclear techniques, 1998, (9).
[1]谢东珠,朱德彰,曹建清,曹德新,潘浩昌,徐洪杰.In~+离子注入蓝宝石(α-A1_2O_3单晶)的表面改性研究[J].核技术,1998(09):513-518. DOI：

Surface modification of sapphire implanted with indium ions[J]. Nuclear techniques, 1998, (9). DOI：

摘要

研究了＜０００１＜和＜１２１０＞晶向蓝宝石（α－Ａｌ２Ｏ３单晶）在注入３６０ｋｅＶ．１×１０￣１６ｃｍ￣－２或１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋后产生的损伤、注入层的性能变化和退火行为。实验结果表明，退火过程中损伤的恢复和Ｉｎ的分布与退火气氛有关：在１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋注入时，注入层电阻率降低了１０个量级，大小为６．８×１０￣３·ｃｍ，表面损伤层的显微硬度提高了９２％；在３６０ｋｅＶ，１×１０￣１６ｃｍ￣－２的Ｉｎ＋注入时，其表面损伤层的显微硬度提高了４５％，在空气中不同温度下退火后，其显微硬度的变化和损伤的变化具有相同的规律。

Abstract

Single crystals of sapphire （α-Al2O3） implanted with 100keV

6×1016cm-2 （In+） or 360keV

1×1016cm2 （In+） have been studied. The implantation was carried out at room temperature but the annealing was performed isothermally in Ar or air atmosphere at temperature in the range from 600℃ to 1100℃ The Rutherford backscattering spectrometry and channeling of 2.4MeV He+ were used to observe the depth distribution of lattice damage and implants. The microhardness and resistivity of the implanted layer were investigated by means of the depth-sensing low-load indentation technique and the electrical conductivity measurement

respectively. Results on the structural changes are correlated with the measured changes of physical properties.

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Related Author

谢东珠

朱德彰

潘浩昌

曹德新

徐洪杰

史维东

何飞舟

王齐祖

Related Institution

Laboratory of Nuclear Analysis Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences

National Laboratory of Materials Modification by Laser, Ion and Electron Beams,Dalian University of Technology, Delian

Lanzhou University

中国建筑材料科学研究院

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