Effect of dose rate on radiation damage and annealing of high speed CMOS circuit

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Effect of dose rate on radiation damage and annealing of high speed CMOS circuit

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- Effect of dose rate on radiation damage and annealing of high speed CMOS circuit
- NUCLEAR TECHNIQUES Issue 8, (1998)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432
- Published：01 August 1998
- 稿件说明：
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[1]郭旗,陆妩,余学锋,任迪远,严荣良.高速CMOS电路电离辐照损伤的剂量率效应[J].核技术,1998(08):503-506.

Effect of dose rate on radiation damage and annealing of high speed CMOS circuit[J]. Nuclear techniques, 1998, (8).
[1]郭旗,陆妩,余学锋,任迪远,严荣良.高速CMOS电路电离辐照损伤的剂量率效应[J].核技术,1998(08):503-506. DOI：

Effect of dose rate on radiation damage and annealing of high speed CMOS circuit[J]. Nuclear techniques, 1998, (8). DOI：

摘要

对国产加固６４ＨＣ０４高速ＣＭＯＳ电路进行了不同剂量率的辐照响应和室温退火特性研究。探讨了５４ＨＣ０４电路在不同剂量率辐照下的损伤机理和失效模式的差异及其对高速ＣＭＯＳ电路在辐射环境中应用可靠性的影响。

Abstract

High speed CMOS circuits 54HC04 were subjected to irradiations with the same total dose of 1×10Gy（Si） but at two different dose rates

and annealing measurements were performed at room temperature. The variance of both damage mechanism and failure mode for different dose rates was analysed

and the influence of dose rate on the reliability of high speed CMOS circuits in radiation environments Was disscussed.

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Related Author

YU Xuefeng AI Erken REN Diyuan GUO Qi ZHANG Guoqiang LU Wu

艾尔肯

任迪远

郭旗

张国强

陆妩

石见见

赵文增

Related Institution

中国科学院新疆物理研究所

Xinjiang Technical Institute of Physics and Chemistry, the Chinese Academy of Sciences

School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University

School of Nuclear Science and Engineering, North China Electric Power University

Institute of Modern Physics, Chinese Academy of Sciences

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