Low temperature solid phase epitaxial regrowth of amorphous  silicon enhanced by Ni implantation

Cao Dexin    Zhu Dezhang    Zhu Fuying    Cao Jianqing

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Low temperature solid phase epitaxial regrowth of amorphous silicon enhanced by Ni implantation

更新时间：2021-04-09

- Low temperature solid phase epitaxial regrowth of amorphous silicon enhanced by Ni implantation
- NUCLEAR TECHNIQUES Issue 2, (1997)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL34
- Published：01 February 1997
- 稿件说明：
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[1]曹德新,朱德彰,朱福英,曹建清.镍增进无定形硅低温固相外延生长[J].核技术,1997(02):16-19.

Cao Dexin Zhu Dezhang Zhu Fuying Cao Jianqing. Low temperature solid phase epitaxial regrowth of amorphous silicon enhanced by Ni implantation[J]. Nuclear techniques, 1997, (2).
[1]曹德新,朱德彰,朱福英,曹建清.镍增进无定形硅低温固相外延生长[J].核技术,1997(02):16-19. DOI：

Cao Dexin Zhu Dezhang Zhu Fuying Cao Jianqing. Low temperature solid phase epitaxial regrowth of amorphous silicon enhanced by Ni implantation[J]. Nuclear techniques, 1997, (2). DOI：

摘要

离子注入形成的无定形硅在可形成硅化物杂质镍作用下，促使无定形层硅在低温（４３０℃）时发生了固相外延生长。注入杂质镍浓度为１×１０１２－２．５×１０１７Ｎｉ／ｃｍ２。卢瑟福背散射和沟道（ＲＢＳ－Ｃ）测量表明，６个量级剂量注入并经４３０℃退火后的样品都发生了不同程度的固相外延生长，且比通常固相外延生长约加快了二个数量级，其外延生长速度与镍浓度相关。

Abstract

Solid phase epitaxial regrowth of amorphous silicon formed at 430℃was found if the amorphous silicon layer involved implanted Ni impurity with dose range from 1×10 12 ; to 2.5×10 17 Ni/cm 2. The Rutherford backscattering with channeling was used to determine the thickness of amorphous Si layer after 430℃ annealing. The results indicate that the SPER at 430℃ occurs and its rate depends on Ni implanted dose

and normally

the SPER is faster than that of pure amorphous Si by two orders.

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